G3R30MT12K

Obrázky sú len orientačné
Číslo dielu
G3R30MT12K
Výrobca
GeneSiC Semiconductor
Kategórie
MOSFET
RoHS
Dátový hárok
popis
MOSFET 1200V 30mO TO-247-4 G3R SiC MOSFET

technické údaje

Výrobca
GeneSiC Semiconductor
Kategórie
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
70 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
281 W
Qg - Gate Charge
118 nC
Rds On - Drain-Source Resistance
30 mOhms
Technology
SiC
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs - Gate-Source Voltage
- 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage
2.7 V

Najnovšie recenzie

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

fast delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Ľudia, ktorí si prezerali G3R30MT12K, si kúpili

Súvisiace kľúčové slová pre G3R3

  • G3R30MT12K Integrated
  • G3R30MT12K RoHS
  • G3R30MT12K Katalógový list PDF
  • G3R30MT12K Dátový hárok
  • G3R30MT12K časť
  • G3R30MT12K kúpiť
  • G3R30MT12K distribútor
  • G3R30MT12K PDF
  • G3R30MT12K komponentov
  • G3R30MT12K integrované obvody
  • G3R30MT12K Prevziať PDF
  • G3R30MT12K Stiahnuť datasheet
  • G3R30MT12K supply
  • G3R30MT12K dodávateľ
  • G3R30MT12K cena
  • G3R30MT12K Dátový hárok
  • G3R30MT12K obraz
  • G3R30MT12K Picture
  • G3R30MT12K inventár
  • G3R30MT12K sklad
  • G3R30MT12K originál
  • G3R30MT12K najlacnejšie
  • G3R30MT12K vynikajúci
  • G3R30MT12K Bez olova
  • G3R30MT12K špecifikácia
  • G3R30MT12K Horúce ponuky
  • G3R30MT12K Prestávka Cena
  • G3R30MT12K Technické dáta