Číslo dielu G3R30MT12K Výrobca GeneSiC Semiconductor Kategórie MOSFET RoHS Dátový hárok G3R30MT12K popis MOSFET 1200V 30mO TO-247-4 G3R SiC MOSFET
Výrobca GeneSiC Semiconductor Kategórie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 70 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 281 W Qg - Gate Charge 118 nC Rds On - Drain-Source Resistance 30 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V