Číslo dielu SI1016CX-T1-GE3 Výrobca Vishay Semiconductors Kategórie MOSFET RoHS Dátový hárok SI1016CX-T1-GE3 popis MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
Výrobca Vishay Semiconductors Kategórie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 350 mA, 500 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-89-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 220 mW Qg - Gate Charge 1.3 nC, 1.65 nC Rds On - Drain-Source Resistance 396 mOhms, 756 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV