Číslo dielu FQB19N20LTM Výrobca onsemi / Fairchild Kategórie MOSFET RoHS Dátový hárok FQB19N20LTM popis MOSFET 200V N-Ch QFET Logic Level
Výrobca onsemi / Fairchild Kategórie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 21 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.13 W Qg - Gate Charge 35 nC Rds On - Drain-Source Resistance 140 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V