Číslo dielu SI1013X-T1-GE3 Výrobca Vishay Semiconductors Kategórie MOSFET RoHS Dátový hárok SI1013X-T1-GE3 popis MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V
Výrobca Vishay Semiconductors Kategórie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 350 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SC-89-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 275 mW Qg - Gate Charge 1.65 nC Rds On - Drain-Source Resistance 1.2 Ohms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage 450 mV