GB100XCP12-227

Obrázky sú len orientačné
Číslo dielu
GB100XCP12-227
Výrobca
GeneSiC Semiconductor
Kategórie
IGBT Modules
RoHS
Dátový hárok
popis
IGBT Modules 1200V 100A SIC IGBT CoPak

technické údaje

Výrobca
GeneSiC Semiconductor
Kategórie
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Package / Case
SOT-227
Packaging
Bulk
Product
IGBT Silicon Carbide Modules

Najnovšie recenzie

fast delivery, item as described, thanks!!

Quick delivery. Secure packing. Excellent product. Thank you

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Thank You all fine, packed very well

Ľudia, ktorí si prezerali GB100XCP12-227, si kúpili

Súvisiace kľúčové slová pre GB10

  • GB100XCP12-227 Integrated
  • GB100XCP12-227 RoHS
  • GB100XCP12-227 Katalógový list PDF
  • GB100XCP12-227 Dátový hárok
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  • GB100XCP12-227 Stiahnuť datasheet
  • GB100XCP12-227 supply
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  • GB100XCP12-227 cena
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  • GB100XCP12-227 obraz
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  • GB100XCP12-227 Technické dáta